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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5 PARTMARKING DETAIL - ZVN4210 ZVN4210G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 0.8 6 20 2 -55 to +150 UNIT V A A V W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 100 0.8 2.4 100 10 100 2.5 1.5 1.8 250 100 40 12 4 8 20 30 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD25V, I D=1.5A V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=1.5A V GS=5V,I D=500mA V DS=25V,I D=1.5A Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on) Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device ZVN4210G DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER Diode Forward Voltage (1) Reverse Recovery Time (to IR=10%) SYMBOL MIN. V SD T RR TYP 0.79 0.89 135 MAX. UNIT CONDITIONS. V V ns I S=0.32A, V GS=0V I S=1.0A, V GS=0V I F=0.45A, V GS=0V, I R=100mA, V R=10V (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device ZVN4210G TYPICAL CHARACTERISTICS RDS(on)-Drain Source On Resistance () 100 VGS=3V 3.5V 5V 6V 8V 10V VGS= 10V 9V 8V 7V 6V 5V 4V 3.5V 3V 2.5V 2V 10 5 ID - Drain Current (Amps) 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 1 0.1 1.0 10 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 1000 900 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 gfs-Transconductance (mS) e rc ou -S in a VGS=VDS Dr Gate ID=1mA Thres hold V oltage V GS(TH ) s Re is e nc ta RD ) on S( VGS=10V ID=1.5A 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 VDS=10V 25 50 75 100 125 150 175 200 225 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 16 VGS-Gate Source Voltage (Volts) 200 VDD= 20V 50V 80V ID=1.5A 14 12 10 8 6 4 2 0 0 C-Capacitance (pF) 160 120 80 Ciss 40 0 Coss Crss 100 0 20 40 60 80 1 2 3 4 5 6 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage |
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